イオン注入装置

Ion implantation device

Abstract

PURPOSE: To effect ion implantation over a wide area through making-large in diameter of the ion beams from a compact-sized ion source, and effect uniform ion implantation through adjustment of a beam intensity distribution and selection of an ion kind. CONSTITUTION: The ion beams from an ion source 1 describe different locuses of movement through passing through a fixed magnetic field generated from a sector 2, by which selection is made from among kinds of ions and a desired kind of ions is passed through an analyzing slit 3. It is accelerated by an acceleration tube 4 up to a specified energy. When passing through quartet pole magnetic lenses 61, 62, the beam section is made large into a rectangular shape. When passing through sextet pole magnetic lenses 51, 52, the beam comes to have a uniform intensity distribution in a horizontal direction X of the substrate surface. The reshaped ion beam propagates through a drift space and reaches a position P. A sensor means 7 senses the beam current, and a control means 81 reads the detection signal and adds thereto a beam current data to send the resulting signal to an overall controller 82. In response to the information sent thereto, it controls the current of the lenses 61, 62 and adjusts the beam size at a position P, to thereby make adjustment of the fixed intensity of the lenses 51, 52. COPYRIGHT: (C)1993,JPO&Japio
(57)【要約】 【目的】 コンパクトなイオン源を用いて、該イオン源 からのイオンビーム径を所望の大きさに容易に拡大で き、しかも、該拡大面積全体にわたりビーム強度分布状 態を均一に調整できるとともに所望のイオン種を容易に 選択でき、該イオン種により均一にイオン注入すること ができるイオン注入装置を提供する。 【構成】 イオン源1、イオン源からのイオンビームか ら所望のイオン種を選択する質量分析用セクターマグネ ット2、マグネット2を出たイオンのうち不要なイオン を除去する分析スリット3、イオンビーム加速管4、加 速管4を通過したイオンビーム径を拡大する4重極マグ ネットレンズ61、62、インオ注入位置Pでのビーム 強度分布を均一化する6重極マグネットレンズ51、5 2、位置Pにおけるビーム強度分布状態を検出する装置 7及びコントローラ81、さらにイオン源電源P1、加 速管電源P4、マグネット電源P2、P51、P52、 P61、P62を制御するコントローラ82を備えたイ オン注入装置。

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Cited By (5)

    Publication numberPublication dateAssigneeTitle
    GB-2358956-AAugust 08, 2001Nissin Electric Co LtdMethod of controlling electrostatic lens using beam characteristics
    GB-2358956-BDecember 31, 2003Nissin Electric Co LtdMethod of controlling electrostatic lens and ion implantation apparatus
    KR-100668746-B1January 29, 2007주식회사 하이닉스반도체Apparatus and method of partial ion implantation using wide beam
    US-6614027-B1September 02, 2003Nissin Electric Co., Ltd.Method of controlling electrostatic lens and ion implantation apparatus
    US-6770889-B2August 03, 2004Nissin Electric Co., Ltd.Method of controlling electrostatic lens and ion implantation apparatus