アモルフアス強誘電体酸化物材料及びその製造方法

Amorphous ferroelectric oxide material and its production

Abstract

PURPOSE:To obtain a ferroelectric thin film having high transparency by forming an amorphous thin film of a ternary oxide based on the oxide of a transition metal, aluminum oxide and a pyrochlore type compd. on a substrate at a prescribed temp. CONSTITUTION:The oxide of a transition metal (M2O3), e.g. Fe2O3 is blended with aluminum oxide (Alambda2o3) and a pyrochlore type compd. (A2B2O3), e.g. Cd2 Nb2O7 or Pb.Nb,0, so as to give a compsn. within the region defined by points alpha, beta, gamma, delta, epsilon in the triangular compsn. diagram and they are wet-mixed and filled into a laboratory dish. This dish is put on the cathode plate of a film forming device such as an RF magnetron sputtering device and the mixture is used as a target. An SiO2 film of about 200nm thickness is previously formed on a substrate such as an Si wafer with (111) orientation by oxidation treatment. The device is evacuated to about <=2X10<-7> Torr and sputtering gas such as a gaseous mixture having 7:3 ratio of Ar:O2 is introduced into the device. A thin film is formed by sputtering on the substrate at <=300 deg.C, e.g. 20-25 deg.C while keeping about 25mTorr total pressure of gas.
(57)【要約】 【目的】 本発明は、薄膜型のコンデンサー素子、強誘 電体メモリー、電気光学デバイス等に適用しうる非晶質 (アモルファス)の強誘電性材料及びその製造方法を提 供する。 【構成】 遷移金属酸化物(M 2 O 3 )−酸化アルミニ ウム(Al 2 O 3 )−パイロクロア型化合物(A 2 B 2 O 7 )を主成分とした三元酸化物からなり、かつ該三元 酸化物がアモルファス構造を有することを特徴とする。 (ただし、M 2 O 3 は、Sc、Ti、V、Cr、Mn、 Fe、Co、Ni、Y、Zr、Nb、Mo、Pd、H f、Ta、W、In及びランタン系列元素の酸化物から なる群から選ばれる少なくとも一種であり、A 2 B 2 O 7 は強誘電性、反強誘電性または常誘電性を示すパイロ クロア型化合物である。)

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