半導体圧力計

Semiconductor pressure meter

Abstract

(57)【要約】 【目的】 温度特性が良好で、製造コストが安価に出 来、強度が向上された半導体圧力計の実現にある。 【構成】 半導体チップと該半導体チップに設けられる ダイアフラムを構成する凹部と、前記ダイアフラムに設 けられた半導体圧力検出素子と、前記半導体チップに一 面が接続され前記凹部と圧力導入室を構成する半導体チ ップ支持基板と、前記半導体チップ支持基板に設けられ 前記圧力導入室に連通する第1連通孔と、前記第1連通 孔の軸に直交し前記第1連通孔の周囲を除いて前記半導 体チップ支持基板に設けられ半導体チップ支持基板に小 径部を構成する板状の隙間とを具備してなる半導体圧力 計である。
PURPOSE: To realize an excellent temperature characteristics, reduce the production cost and improve the strength of the device by providing a second communicative hole communicating with a first communicative hole prepared on a substrate and a metallic support plate whose one end is fixed on the other face of the substrate. CONSTITUTION: After a pressure introduction chamber 22 is introduced by reference pressure P s , pressure P m to be measured is given from the outside of a diaphragm 3, so that the diaphragm 3 deviates corresponding to the differential pressure of the pressure P m -P s . The displacement is detected electrically to obtain the electric signal output corresponding to the pressure P m . The diffused distortion is communicated through a substrate 15 to a semiconductor chip support substrate 21, however, since a small-dia. section 25 is prepared in an intermediate section of the substrate 21, the distortion is reduced to a great extent and communicated to the substrate 21. As a result, the connection yield can be improved so much. Therefore the production cost can be also reduced, and furthermore the strength of entire device can be improved because the strength of the connected section is increased. COPYRIGHT: (C)1993,JPO&Japio

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Cited By (2)

    Publication numberPublication dateAssigneeTitle
    US-5520054-AMay 28, 1996Rosemount Inc.Increased wall thickness for robust bond for micromachined sensor
    US-9207124-B2December 08, 2015Seiko Epson CorporationColorimetry apparatus