氧化镓-氧化锌类溅射靶、透明导电膜及其形成方法

Gallium oxide/zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film

Abstract

本发明涉及一种高密度氧化镓-氧化锌类烧结体溅射靶,其特征在于,含有氧化锆和氧化铝各20质量ppm以上,并且它们的总量小于250ppm。氧化镓(Ga<sub>2</sub>O<sub>3</sub>)-氧化锌(ZnO)类溅射靶(GZO类靶)是通过微量添加特定的元素而得到可以使导电性和靶的体积密度改善的靶、即通过改善成分组成而得到可以提高烧结密度、抑制结核形成并且防止异常放电及颗粒产生的靶,同时,提供使用该靶形成透明导电膜的方法以及由该方法形成的透明导电膜。
A high-density gallium oxide/zinc oxide sintered sputtering target characterized by containing 20 massppm or more of each of zirconium oxide and aluminum oxide wherein the sum thereof is less than 250 ppm. In the gallium oxide (Ga2O3)/zinc oxide (ZnO) sputtering target (GZO target), the conductivity and bulk density of target are enhanced by adding of a minute amount of specified element. That is, through improvement of component formulation, there can be realized raising of sintering density, suppressing of nodule generation and production of target capable of avoiding of abnormal electric discharge and particle generation. Further, there is provided a method of forming a transparent conductive film with the use of the target and provided a transparent conductive film formed thereby.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (3)

    Publication numberPublication dateAssigneeTitle
    CN-101851745-BDecember 26, 2012宜兴佰伦光电材料科技有限公司一种透明导电膜用izgo溅射靶材及制造方法
    CN-102212781-AOctober 12, 2011孔伟华一种高密度低成本氧化锌铝溅射靶材的制造方法
    CN-103510056-AJanuary 15, 2014三星康宁精密素材株式会社, 三星显示有限公司氧化锌基溅射靶及其制造方法和薄膜晶体管