Method for improving ohm contact performance of metal-P type semiconductor

一种改善金属-p型半导体欧姆接触性能的方法

Abstract

The invention belongs to manufacturing technology of semiconductor equipment. A method for improvement of ohm contact performance of metal-P type semiconductor equipment is provided. The process comprises the following steps of: 1. synthesizing and purifying a carbon nanotube firstly; 2. preparing a nanocarbon tube film on a P-type semiconductor; 3. preparing a layer of dielectric film on the carbon nanotube film, depositing a layer of photo-resist, and then defining designed graphics on photo-resist by semiconductor micro-nano manufacturing technology, after exposure, putting the semiconductor device into developing solution for developing, cleaning and hard-baking treatments, and etching the dielectric film with the photo-resist as a mask, etching the carbon nanotube film with the dielectric film with designed graphics as a new mask, after that, removing residual dielectric film material; 4. preparing a metal electrode or alloy on the carbon nanotube film. The carbon nanotube film is applied in the invention to improve the ohm contact characteristic of semiconductor equipment, with the advantage of simple manufacturing technology and low cost for large scale application, as well as the capability of improving reliability and service life of semiconductor equipment.
本发明属于半导体器件制造技术,为一种改善金属-P型半导体欧姆接触性能的方法。其过程为:①先合成和提纯纳米碳管;②在P型半导体上制备纳米碳管薄膜;③在纳米碳管碳薄膜上制备一层介质膜;再沉积一层光刻胶;然后利用半导体微纳制作技术在光刻胶上定义所设计的图形,曝光后,将半导体器件置入显影液中显影、清洗和坚膜后,以光刻胶作为掩蔽,刻蚀介质膜;利用带有设计图形的介质膜作为新的掩蔽刻蚀纳米碳管薄膜,刻蚀完成后去掉残余的介质膜材料;④在纳米管碳薄膜上制备金属电极或合金。本发明利用纳米碳管薄膜改善半导体器件的欧姆接触特性,具有制作工艺简单、成本低和适合大规模应用等优点,可以提高半导体器件的可靠性和寿命。

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    CN-101859858-AOctober 13, 2010中国科学院苏州纳米技术与纳米仿生研究所基于石墨烯的透明导电电极及其制法与应用
    CN-101859858-BMarch 27, 2013中国科学院苏州纳米技术与纳米仿生研究所基于石墨烯的透明导电电极及其制法与应用
    CN-102253601-ANovember 23, 2011无锡中微晶园电子有限公司提高7350光刻胶热稳定性的方法
    CN-102253601-BApril 24, 2013无锡中微晶园电子有限公司提高7350光刻胶热稳定性的方法