Self-aligned pitch reduction

自对准的节距缩减

Abstract

提供了一种在蚀刻层中提供特征的方法。在该蚀刻层上形成牺牲层。将牺牲层特征组蚀刻入该牺牲层。穿过该牺牲层将第一蚀刻层特征组蚀刻入该蚀刻层。利用填充材料填充该第一蚀刻层特征组和该牺牲层特征组。去除该牺牲层。利用侧壁沉积物收缩在该填充材料的部分之间的空隙宽度。穿过该收缩侧壁沉积物将第二蚀刻层特征组蚀刻入该蚀刻层。去除该填充材料和收缩侧壁沉积物。
A method providing features in a etch layer is provided. A sacrificial layer is formed over the etch layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of etch layer features is etched into the etch layer through the sacrificial layer. The first set of etch layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of etch layer features is etched into the etch layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.

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