The invention relates to a method for preparing zinc oxide with a mircronano structure through thermal evaporation with various reductants, belonging to the semiconducting material and the preparation thereof technical field. A Evaporation source comprises zinc oxide powder and the reductanr, wherein the reductant can be carbon group element material or metal or organic compound; and a finished product is made at a reacting temperature of between 550 and 890 DEG C, at a growth temperature of between 160 and 870 DEG C, and at an atmosphere pressure of between 10<5> and 10<3> Pa. The evaporation source can be doped with other elements or compounds. The method obtains a ZnO product with various shapes, sizes and structures through changing the process condition. Compared with reductant of using graphate as an electrode, the reductant of the invention is used to reduce the reacting temperature up to between 100 and 500 DEG C. Through the method, a ZnO micronano or nano structure can grow at a lower temperature on a substrate which is easily oxidized or easily deteriorated in oxygen rich environment or/and high-temperature environment.